Jan 24, Product specification. HF/VHF power MOS transistor. BLF FEATURES. • High power gain. • Low intermodulation distortion. • Easy power. The BLF is a gold-metallized silicon n-channel RF power transistor de- signed for . P1dB reserves the right to change, without notice, the specifications and. HF/VHF power MOS transistor. BLF FEATURES. • High power gain. • Low intermodulation distortion Downloaded from: forfindsebullperf.cf .
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BLF Datasheet (PDF) - NXP Semiconductors. Part No. BLF Download, BLF Click to view. File Size, Kbytes. Page, 16 Pages. Maker, PHILIPS . BLF from NXP >> Specification: RF FET Transistor, V, 16 A, W, 1 MHz, MHz. Jan 11, Electrical Specifications The mechanical drawing be downloaded in DXF format: forfindsebullperf.cf
High frequency and microwave engineering.
Please enter a valid Pincode. Use electrolytic capacitors in electronic circuit design for applications like signal coupling, nois. The exact specifications depend on the manufacturer, case type, and variation.
Choose the correct Zener diode. Build your own low-power transmitters: The 2N is considered a very common transistor,    and is used as an exemplar of an NPN transistor. S is measured on the emitter lead at the soldering point to the pcb SKYLF 0. Supply voltage required through external RF choke. RF input.
De- embedded scattering and noise parameters are provided in addition to Measurement of S This can be hard to do, especially at RF frequencies where lead Data Sheet - Modelithics ; Data Sheet. RF input pin.
This pin requires the use of an external DC blocking capacitor chosen Performance data, graphs, s-parameter data set. The MC is fabricated with an advanced RF Additional noise parameters are listed in Table 14 and Table If you have any questions related to the data sheet, please contact our nearest sales Refer to the handbook 'General' section for further information. CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling.
For further information, refer to Philips specs. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user.
It must never be thrown out with the general or domestic waste. Maximum values at drive levels within the specified PEP values for either amplified tone. For the peak envelope power the values should be decreased by 6 db.
C1, C4, C13, C14 film dielectric trimmer 7 to 1 pf C2 multilayer ceramic chip capacitor 56 pf C3, C11 multilayer ceramic chip capacitor 62 pf C5, C6 multilayer ceramic chip capacitor 1 nf C7 multilayer ceramic chip capacitor 3 1 nf C8 electrolytic capacitor 2. C1, C2, C16, C18 film dielectric trimmer 2. The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as a ground.